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APT60M80L2VR
600V 65A 0.080
POWER MOS V(R) MOSFET
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. V(R)
L2VR
TO-264 Max
* TO-264 MAX Package * Faster Switching * Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT60M80L2VR UNIT Volts Amps
600 65 260 30 40 833 6.67 -55 to 150 300 65 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.080 25 250
(VGS = 10V, ID = 32.5A)
Ohms A
6-2004 050-5991 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
100 2 4
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT60M80L2VR
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 65A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 65A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 65A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 65A, RG = 5
MIN
TYP
MAX
UNIT
13300 1610 700 590 50 310 14 24 70 31 1880 2830 3100 3345 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
65 260 1.3 937 29 8
(Body Diode) (VGS = 0V, IS = -ID65A)
Reverse Recovery Time (IS = -ID65A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID65A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.15 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.51mH, RG = 25, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID65A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16
, THERMAL IMPEDANCE (C/W)
0.14 0.12
0.9
0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
6-2004
050-5991 Rev B
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
180 160
ID, DRAIN CURRENT (AMPERES)
APT60M80L2VR
6.5V 15 &10V 6V
140 120 100 80 60 40 20 0
RC MODEL Junction temp. (C) 0.0456 Power (watts) 0.104 Case temperature. (C) 0.493F 0.0272F
5.5V
5V 4.5V 4V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 180
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
NORMALIZED TO = 10V @ I = 32.5A
D
160 140 120 100 80 60 40 20 0 0 TJ = +125C TJ = +25C TJ = -55C
1.3 1.2 VGS=10V 1.1 1.0 0.9 0.8 VGS=20V
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
70 60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90 -50
= 32.5A = 10V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
GS
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-5991 Rev B
6-2004
260 100
OPERATION HERE LIMITED BY RDS (ON)
50,000
APT60M80L2VR
Ciss
ID, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
100S
10,000 5000
10
Coss 1000 500 Crss
1mS 10mS
1
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 65A
200 100 TJ =+150C
12 VDS=120V 8
TJ =+25C
VDS=300V
VDS=480V
10
4
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 600 500
td(on) and td(off) (ns)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 200
V
DD G
= 400V
R
= 5
td(off)
V
DD G
T = 125C
J
150
tr and tf (ns)
L = 100H
400 300 200 100
= 400V
tf 100
R
= 5
T = 125C
J
L = 100H
50 td(on) 0 30 70 90 110 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
tr 0 30
50
8,000
V
= 400V
70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000
V I
DD
50
= 400V
R
= 5
D J
= 65A
T = 125C
J
SWITCHING ENERGY (J)
L = 100H E ON includes diode reverse recovery.
Eoff
SWITCHING ENERGY (J)
6,000
20,000
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
15,000
4,000 Eon 2,000
10,000 Eon 5,000
050-5991 Rev B
6-2004
70 80 90 100 110 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 30
0 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
Typical Performance Curves
APT60M80L2VR
10%
Gate Voltage 90% TJ125C Gate Voltage TJ125C
td(on)
Drain Current 90%
td(off)
tr
90%
Drain Voltage
tf
5% Switching Energy 10% 5% Drain Voltage Switching Energy
10% 0 Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2VFR) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-5991 Rev B
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
6-2004
Gate Drain Source

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